PESD3V3U1UA;
PESD3V3U1UB; PESD3V3U1UL
Ultra low capacitance unidirectional ESD protection diodes
Rev. 01 — 30 October 2008
Product data sheet
1. Product pro?le
1.1 General description
Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
Table 1.
Product overview
Type number
Package
NXP
JEITA
Package con?guration
PESD3V3U1UA
PESD3V3U1UB
PESD3V3U1UL
SOD323
SOD523
SOD882
SC-76
SC-79
-
very small
ultra small and ?at lead
leadless ultra small
1.2 Features
I Unidirectional ESD protection of one line I ESD protection up to 9 kV
I Ultra low diode capacitance: C d = 2.6 pF I IEC 61000-4-2; level 4 (ESD)
I Very low leakage current: I RM = 1 nA
1.3 Applications
I AEC-Q101 quali?ed
I
I
I
I
I
USB interfaces
10/100/1000 Mbit/s Ethernet
FireWire
High-speed data lines
Subscriber Identity Module (SIM) card
I
I
I
I
I
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
Audio and video equipment
protection
1.4 Quick reference data
Table 2. Quick reference data
T amb = 25 ° C unless otherwise speci?ed.
Symbol
V RWM
C d
Parameter
reverse standoff voltage
diode capacitance
Conditions
f = 1 MHz; V R = 0 V
Min
-
-
Typ
-
2.6
Max
3.3
3.1
Unit
V
pF
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相关代理商/技术参数
PESD3V3U1UB 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Ultra low capacitance unidirectional ESD protection diodes
PESD3V3U1UB,115 功能描述:TVS 二极管 - 瞬态电压抑制器 DIODE ARRAY ESD 1L ULTRA LO CD RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
PESD3V3U1UB115 制造商:NXP Semiconductors 功能描述:ESD PROTECTION DIODE SOD-523- 制造商:NXP Semiconductors 功能描述:DIODE ((NW))
PESD3V3U1UL 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Ultra low capacitance unidirectional ESD protection diodes
PESD3V3U1UL,315 功能描述:TVS 二极管 - 瞬态电压抑制器 DIODE ARRAY ESD 1L ULTRA LO CD RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
PESD3V3U1UT 制造商:NXP Semiconductors 功能描述:DIODE TVS 0.8UA 3.3V SOT-23 制造商:NXP Semiconductors 功能描述:DIODE, TVS, 0.8UA, 3.3V, SOT-23 制造商:NXP Semiconductors 功能描述:DIODE, TVS, 0.8UA, 3.3V, SOT-23; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:3.3V; Breakdown Voltage Min:5.8V; Breakdown Voltage Max:6.9V; Clamping Voltage Vc Max:20V; Peak Pulse Current Ippm:5A; Diode Case ;RoHS Compliant: Yes
PESD3V3U1UT,215 功能描述:TVS二极管阵列 3.3 ESD PROTECTION RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
PESD3V3U1UT215 制造商:NXP Semiconductors 功能描述:DIODE TVS SOT-23